发明名称 NORMAL-TEMPERATURE BONDING DEVICE AND NORMAL-TEMPERATURE BONDING METHOD
摘要 PROBLEM TO BE SOLVED: To more appropriately bond a plurality of substrates of a dissimilar material.SOLUTION: A normal-temperature bonding device comprises a first beam source 18, a second beam source 17, and a pressure-welding mechanism 15. The first beam source 18 emits a first activation beam Bb irradiated to a first surface of a first substrate 52. The second beam source 17 emits a second activation beam Ba irradiated to a second surface of a second substrate 42. The pressure-welding mechanism 15 bonds the first substrate 52 and the second substrate 42 by bringing the first surface into contact with the second surface after the first surface is irradiated with the first activation beam Bb and the second surface is irradiated with the second activation beam Ba. First irradiation irradiates the first surface with the first activation beam Bb. Second irradiation irradiates the second surface with the second activation beam Ba. The first irradiation and the second irradiation are separately performed.
申请公布号 JP2014072249(A) 申请公布日期 2014.04.21
申请号 JP20120215151 申请日期 2012.09.27
申请人 MITSUBISHI HEAVY IND LTD;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 KINOUCHI MASAHITO;GOTO TAKAYUKI;TSUNO TAKESHI;UCHIUMI ATSUSHI;IDE KENSUKE;SUZUKI TAKENORI;TSUTSUMI KEIICHIRO;TAKAGI HIDEKI;KURASHIMA YUICHI
分类号 H01L21/02;B23K20/00 主分类号 H01L21/02
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