| 摘要 |
The present invention relates to a method for forming ohmic contact of a SiC MOSFET comprising a first step for forming an n-type doping area and a p-type doping area on SiC; a second step for continuously forming Ti thin films and Ni films on the n-type doping area and the p-type doping area; and a third step for forming the ohmic contact on the n-type doping area and the p-type doping area at the same time by performing heat-processing in the SiC. A method for forming an ohmic electrode on the p-type area and the n-type area is provided to form the ohmic electrode on the p-type area and the n-type area using same materials at the same time, thereby simplifying a manufacturing process or improving features of the SiC MOSFET by decreasing contact resistance. |
