发明名称 SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR SAME
摘要 [Object] A semiconductor device is provided which includes an electrical insulating layer with superior heat resistance, heat dissipation, and durability, and which is manufactured through a process with good cost performance and process performance. [Solution] In a semiconductor device including a first substrate to which a semiconductor chip is mounted directly or indirectly, and a white insulating layer formed on a surface of the first substrate and functioning as a reflecting material, the semiconductor chip is an LED, at least the surface of the first substrate is made of a metal, and a stacked structure of the white insulating layer and a metal layer is formed by coating a liquid material, which contains SiO 2 in the form of nanoparticles and a white inorganic pigment, over the surface of the first substrate and baking the coated liquid material. Preferably, a rate of SiO 2 and the white insulating layer contained in the white insulating layer after the baking is 80 % by weight or greater.
申请公布号 KR20140047123(A) 申请公布日期 2014.04.21
申请号 KR20147003419 申请日期 2012.07.31
申请人 STEQ INC.;SSTECHNO, INC.;SHIKOKU INSTRUMENTATION CO., LTD. 发明人 ISHIHARA MASAMICHI;OYAMA KENSHU;MURAKAMI SHOJI;ONOSAKA HITONOBU
分类号 H01L23/12;H01L33/02 主分类号 H01L23/12
代理机构 代理人
主权项
地址