| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric conversion element which allows for easy formation of a structure where the surface impurity concentration in a region to be connected with an electrode is higher than that on the periphery thereof, in a diffusion region formed in a silicon substrate, and to provide a photoelectric conversion element the conversion efficiency of which can be enhanced.SOLUTION: A method of manufacturing a photoelectric conversion element includes a step for forming a diffusion region 14 where impurities are diffused to one surface side of a silicon substrate 12 in the thickness direction, a step for forming a first diffusion region 14a, and a second diffusion region 14b having a surface impurity concentration lower than that of the first diffusion region 14a, by partially irradiating the diffusion region 14 with laser, and a step for forming an electrode 16a on a region becoming the first diffusion region 14a in the diffusion region 14. |
