发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve reliability of an electrical connection by a conductive member.SOLUTION: A first wiring part includes an interlayer which consists of a material being different from those of a first insulation layer a first conductive layer, and is positioned between the first insulation layer and the first conductive layer. In a step for forming a first hole penetrating a first element part and the first insulation layer, from the first semiconductor layer side toward the first conductive layer side, and for forming a second hole penetrating the first element part, the first wiring part and the second insulation layer from the first semiconductor layer side toward the second conductive layer, an etching condition of the first insulation layer for forming the first hole is that an etching rate to the first insulation layer material in the etching condition, is higher than that to the interlayer material in the etching condition.
申请公布号 JP2014072295(A) 申请公布日期 2014.04.21
申请号 JP20120215969 申请日期 2012.09.28
申请人 CANON INC 发明人 SHIMOTSUSA MINEO
分类号 H01L21/3205;H01L21/768;H01L23/522;H01L27/14;H01L27/146 主分类号 H01L21/3205
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