| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem of conventional wet etching method and wet etching device of a semiconductor wafer by phosphorus acid, in which etchant in a processing tank is discharged by discharge means when the Si concentration in the etchant reaches a predetermined concentration, and new etchant is replenished by supply means, that control of etchant concentration is poor and thereby stabilized etching is impossible.SOLUTION: A wet etching device performs small amount of liquid exchange for discharging the liquid when the etching exceeds a set process integration (number of processed sheets×processing time), continuing liquid discharge even after a small amount liquid exchange liquid discharge sensor is turned on, and stopping liquid discharge by turning a valve off upon elapsing a predetermined time. A manufacturing method for a semiconductor device in which wet etching of a semiconductor wafer is performed by the wet etching device is also provided. |
