FIELD EFFECT TRANSISTOR, SEMICONDUCTOR DEVICE EQUIPPED WITH THE SAME AND FIELD EFFECT TRANSISTOR MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a field effect transistor which can inhibit heat generation even when used as a driver circuit and the like which places a high burden on a semiconductor layer.SOLUTION: In a field effect transistor which has at least a semiconductor layer, a source electrode, a drain electrode, a gate insulation film and a gate electrode on a substrate in which the source electrode and the drain electrode are connected via the semiconductor layer and which has a gate insulation film between the gate electrode and the semiconductor layer, an oxidation reduction potential at 25°C of the source electrode and the drain electrode at parts which contact at least the semiconductor layer is not less than -1.7 V and not more than 0.4 V with respect to a normal electrode potential, and the source electrode and the drain electrode have offset regions each of which is within a region of not less then 0.1 μm and not more than 5 μm.