发明名称 |
REDUCING LEAKAGE CURRENT IN A MEMORY DIVICE |
摘要 |
<p>Memory devices and methods of reducing leakage current therein are disclosed. The memory device includes a memory core array including a plurality of bitlines, and peripheral logic configured to interface with the memory core array. The memory device further includes a footswitch configured to isolate the peripheral logic from a ground voltage, and a headswitch configured to isolate a precharge current path from the plurality of bit lines of the memory core array. Leakage current within the memory device may be reduced via the isolation provided by the footswitch and the headswitch.</p> |
申请公布号 |
KR20140047152(A) |
申请公布日期 |
2014.04.21 |
申请号 |
KR20147005622 |
申请日期 |
2010.02.02 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
CHEN NAN;SANI MEHDI HAMIDI;CHABA RITU |
分类号 |
G11C7/10;G11C7/06;G11C7/12;G11C17/18 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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