发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To inhibit leakage current in a substrate-gate direction in a semiconductor device such as a field effect transistor using a nitride semiconductor.SOLUTION: A semiconductor device comprises: a buffer layer formed on a substrate; a strained superlattice buffer layer formed on the buffer layer; an electron transit layer which is formed on the strained superlattice buffer layer and formed by a semiconductor material; and an electron supply layer which is formed on the electron transit layer and formed by a semiconductor material. The strained superlattice buffer layer is formed by alternately laminating AlN-containing first lattice layers and GaN-containing second lattice layers. The strained superlattice buffer layer is doped with one or more than one impurity element selected from Fe, Mg, C.
申请公布号 JP2014072429(A) 申请公布日期 2014.04.21
申请号 JP20120218249 申请日期 2012.09.28
申请人 FUJITSU LTD 发明人 ISHIGURO TETSURO;YAMADA ATSUSHI;NAKAMURA TETSUKAZU
分类号 H01L29/812;H01L21/205;H01L21/337;H01L21/338;H01L27/098;H01L29/778;H01L29/808;H02M3/28;H02M7/12 主分类号 H01L29/812
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