摘要 |
PROBLEM TO BE SOLVED: To inhibit leakage current in a substrate-gate direction in a semiconductor device such as a field effect transistor using a nitride semiconductor.SOLUTION: A semiconductor device comprises: a buffer layer formed on a substrate; a strained superlattice buffer layer formed on the buffer layer; an electron transit layer which is formed on the strained superlattice buffer layer and formed by a semiconductor material; and an electron supply layer which is formed on the electron transit layer and formed by a semiconductor material. The strained superlattice buffer layer is formed by alternately laminating AlN-containing first lattice layers and GaN-containing second lattice layers. The strained superlattice buffer layer is doped with one or more than one impurity element selected from Fe, Mg, C. |