发明名称 PLASMA TREATMENT METHOD, AND PLASMA TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma treatment method, in which a processing object electrostatically attracted by a stage can be released as soon as possible with a simple construction.SOLUTION: In a vacuum treatment chamber 1a, a processing object W is electrostatically attracted by a chuck plate 52 of an electrostatic chuck mounted on a surface of a metallic base 51. A gas to be excited into plasma is introduced into the vacuum treatment chamber evacuated. An electric power is applied to an electrode 2 disposed in that vacuum treatment chamber thereby to establish a plasma atmosphere, in which the processing object W is subjected to the plasma treatment. A potential of the base is made floating, and a positive potential is applied to the base for a predetermined time period for the plasma treatment.
申请公布号 JP2014070275(A) 申请公布日期 2014.04.21
申请号 JP20120220249 申请日期 2012.10.02
申请人 ULVAC JAPAN LTD 发明人 FUJII YOSHIJI;NAKAMURA SHINYA
分类号 C23C14/34;C23C14/50;H01L21/683 主分类号 C23C14/34
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