| 摘要 |
PROBLEM TO BE SOLVED: To realize an LED element based on a nitride semiconductor capable of preventing damage to a luminous layer during wire bonding, having high luminous efficiency, and operating with low voltage.SOLUTION: An LED element 1 comprises: a support substrate 11; a conductive layer 20 formed on the top layer of the support substrate 11; an insulation layer 21 formed on part of the top surface of the conductive layer 20, and having a bottom surface that is in contact with the part; a first semiconductor layer 31 configured with a p-type nitride semiconductor, formed on part of the top surface of the conductive layer 20 and part of the top surface of the insulation layer 21, and having a bottom surface that is in contact with the part; a luminous layer 33 configured with a nitride semiconductor and formed on the top layer of the first semiconductor layer 31; a second semiconductor layer 35 configured with an n-type nitride semiconductor, formed on part of the top surface of the luminous layer 33 and part of the top surface of the insulation layer 21, having a bottom surface that is in contact with the part, and having a greater expanse in the horizontal direction than the first semiconductor layer 31 and the luminous layer 33; and a bonding electrode 43 formed on the top surface of the second semiconductor layer 35 at a position directly above an area where the bottom surface of the second semiconductor layer 35 and the top surface of the insulation layer 21 are in contact with each other. |
