| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage circuit having low current consumption, which is excellent in long-term reliability and reading characteristics.SOLUTION: In a semiconductor storage circuit, an output of a first inverter 1 is connected to a source of an electrically writable first nonvolatile memory 2; a drain of the first nonvolatile memory is connected to an input of a second inverter 3; an output of the second inverter is connected to a source of a second nonvolatile memory 4; a drain of the second nonvolatile memory is connected to an input of the first inverter; and the drain of the second nonvolatile memory is set as an output. |
