| 摘要 |
PROBLEM TO BE SOLVED: To provide a reference voltage generator device having flat temperature characteristics.SOLUTION: A reference voltage generator device includes: an N-type depletion MOS transistor 14 which is connected to function as a current source for flowing constant current; and an N-type enhancement MOS transistor 13 which is diode-connected (with the N-type depletion MOS transistor 14), has a structure with a buried channel layer identical to that of the N-type depletion MOS transistor 14 under a gate oxide film, and generates reference voltage in accordance with the constant current. A fact that the structure under the gate oxide film of the depletion MOS transistor 14 is identical to that of the enhancement MOS transistor 13 means that temperature characteristics of the transistors are identical, which means that temperature characteristics of an output of the reference voltage generator device is flat. |
