发明名称 PATTERN FORMING METHOD, ACTIVE RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a pattern forming method which suppresses generation of standing waves, which allows formation of a pattern with high rectangularity while minimizing scum in patterning on a stepped substrate, which can achieve excellent exposure latitude and which is particularly suitable for KrF exposure, and to provide an active ray-sensitive or radiation-sensitive resin composition used for the method, a resist film, a method for manufacturing an electronic device, and an electronic device.SOLUTION: The pattern forming method includes steps of: (1) forming a film by using an active ray-sensitive or radiation-sensitive resin composition comprising a resin (A) having a repeating unit having a group that is decomposed by an action of an acid to generate a polar group and a repeating unit having a carboxyl group, a compound (B) that generates an acid by irradiation with active rays or radiation, and a solvent (C); (2) exposing the film to KrF excimer laser light, extreme ultraviolet rays or an electron beam; and (3) forming a negative pattern by developing the exposed film by using a developing solution containing an organic solvent.
申请公布号 JP2014071304(A) 申请公布日期 2014.04.21
申请号 JP20120217564 申请日期 2012.09.28
申请人 FUJIFILM CORP 发明人 KAMIMURA SATOSHI;TAKAHASHI HIDETOMO;KATO KEITA
分类号 G03F7/038;C08F212/14;C08F220/04;C08F220/18;C08F220/26;C08F220/28;C08F220/58;C08F232/00;G03F7/039;H01L21/027 主分类号 G03F7/038
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