发明名称 |
METHOD OF MANUFACTURING RERAM CAPABLE OF CONTROLLING CONFUCTIVE FILAMENTS AND THE RERAM |
摘要 |
<p>The present invention is to provide a method of fabricating a resistive random access memory (ReRAM), capable of controlling electrical characteristics by controlling the positions and the number of conductive filaments. The method includes the steps of: (a) preparing a substrate; (b) forming a lower electrode layer on the substrate; (c) forming a metallic oxide material representing resistive switching characteristics on the lower electrode layer; (d) forming a protective layer to protect the metallic oxide material and to form conductive filaments in required shape and required number on the metallic oxide material; (e) forming a protective layer having a pattern structure without a specific region of the protective layer by etching the protective layer up to the metallic oxide material through a photolithography process; (f) performing a metallic implantation process on an entire portion of the protective layer to locally form a region including a large quantity of metal in the metallic oxide material, corresponding to the patterned structure, thereby forming the conductive filaments; and (g) removing the protective layer having the patterned structure.</p> |
申请公布号 |
KR20140046613(A) |
申请公布日期 |
2014.04.21 |
申请号 |
KR20120111603 |
申请日期 |
2012.10.09 |
申请人 |
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY |
发明人 |
KO, DAE HONG;LEE, DOO SUNG;CHO, MANN HO;SOHN, HYUN CHUL |
分类号 |
H01L21/8247;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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