发明名称 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
摘要 <p>A semiconductor device according to an embodiment of the present invention includes: a semiconductor substrate, edge active pillars which protrude from the upper surface of the semiconductor substrate in a vertical direction, a center active pillar between the edge active pillars, a burying word lines which are arranged between the center active pillar and the edge active pillars, and a burying bit line which is arranged in the center active pillar and arranged in a diagonal direction to the burying word lines. The upper surface of the burying bit line is lower than the upper surface of the center active pillar. The lower surface of the burying bit line is higher than the upper surface of the burying word lines.</p>
申请公布号 KR20140046526(A) 申请公布日期 2014.04.21
申请号 KR20120110128 申请日期 2012.10.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, KEUN NAM;PARK, SUN YOUNG;LEE, KYU PIL;JANG, HYEON WOO;JEONG, JIN WON;CHO, CHANG HYUN;HONG, HYEONG SUN
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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