| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition apparatus that has high replaceability between a reaction gas and a substitution gas and can form a film with excellent in-plane uniformity.SOLUTION: In a film deposition apparatus which performs film deposition processing by supplying a plurality of kinds of reaction gas reacting with each other in order, to a substrate W in a vacuum atmosphere in a processing chamber, a ceiling part 31 provided opposite a placing part 2 where the substrate W is placed has an inclined surface structure shaped spreading from the center to an outer periphery. A plurality of gas discharge ports 42 are formed in a plurality of gas supply parts 4 provided in a center region of the ceiling part 31, and a shower head 5 provided covering those gas supply parts 4 from below supplies a shower-like gas toward the substrate W through the plurality of gas supply ports. The shower head 5 has an outer edge located inside an outer edge of the substrate W placed on the placing part 2. |
