| 摘要 |
PROBLEM TO BE SOLVED: To provide a SiC single crystal-producing apparatus capable of performing a temperature control more easily.SOLUTION: A vessel body 81 of a reaction vessel 8 is divided into a lower heating part 81b and an upper heating part 81c which are physically spaced from each other. As a result, even if drive frequencies of a lower stage coil 13 and an upper stage coil 14 are made identical, interaction between upper and lower magnetic fields is suppressed so that the connection number of lines of magnetic force formed around the individual coils 13 and 14 can be reduced. Therefore, at lower and upper positions of the reaction vessel 8, independent controllability of the lower heating part and the upper heating part to be heated respectively by the lower stage coil 13 and the upper stage coil 14 can be improved to make liable the independent temperature controls of the individual heating parts 81b and 81c. |
