| 摘要 |
A first test structure includes a first isolation region, a first gate electrode over the first isolation region, a first and a second semiconductor fin, and a first contact plug over the first and the second semiconductor fins. A second test structure includes a second isolation region, a second gate electrode over the second isolation region, a third semiconductor fin and a dielectric fin, and a second contact plug over the third semiconductor fin. The first, the second, and the third semiconductor fins and the dielectric fin have substantially a same fin height. A method includes measuring a first capacitance between the first gate electrode and the first contact plug, measuring a second capacitance between the second gate electrode and the second contact plug, and calculating the same fin height from a capacitance difference between the second capacitance and the first capacitance. |
