COMPOSITION FOR PHOTOACTIVATED ETCHING OF SILICON DIOXODE FILMS

摘要

FIELD: chemistry.SUBSTANCE: invention can be used in producing integrated microcircuits and other electronic devices which use a planar manufacturing technique based on photolithographic processes. The composition for photoactivated etching of silicon dioxide films includes a polymer base - polymethyl methacrylate, a photosensitive component - ammonium fluoride in trifluoroacetic acid solution, a solvent - acetone, a protophilic agent - diphenylamine.EFFECT: invention simplifies the process of producing a photoetched pattern on a silicon layer, increases the rate of photoetching and significantly reduces defects in the obtained articles.1 tbl, 4 ex