| 摘要 |
A light emitting device according to an embodiment, includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers. The second conductive semiconductor layer includes an electron blocking layer located adjacent to the active layer and has at least one of a pair structure including first and second layers. The first and second layers include a heterogeneous material. The first layer includes a material which is the same as the material constituting a second conductive dopant doped onto the second conductive semiconductor layer. The second layer has a composition of In_x Al_yGa_1-x-yN(0<=x<y<1) and can be doped with the second conductive dopant. |
