发明名称 MEMORY DEVICE WITH REDUCED ON-CHIP NOISE
摘要 In some examples, a memory device includes multiple memory banks equipped with an isolation switch and dedicated power supply pins. The isolation switch of each memory bank is configured to isolate the memory bank from global signals. The dedicated power supply pins are configured to connect each of the memory banks to a dedicated local power supply pads on the package substrate to provide local dedicated power supplies to each of the memory banks and to reduce voltage transfer between memory banks over conductors on the device, the device substrate, or the package substrate of the memory device.
申请公布号 WO2014059082(A2) 申请公布日期 2014.04.17
申请号 WO2013US64242 申请日期 2013.10.10
申请人 ANDRE, THOMAS;ALAM, SYED, M.;GOGL, DIETMAR;EVERSPIN TECHNOLOGIES, INC. 发明人 ANDRE, THOMAS;ALAM, SYED, M.;GOGL, DIETMAR
分类号 G11C7/02;G11C5/14 主分类号 G11C7/02
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