发明名称 METHOD OF ENDPOINT DETECTION OF PLASMA ETCHING PROCESS USING MULTIVARIATE ANALYSIS
摘要 Disclosed is a method for determining an endpoint of an etch process using optical emission spectroscopy (OES) data as an input. Optical emission spectroscopy (OES) data are acquired by a spectrometer attached to a plasma etch processing tool. The acquired time-evolving spectral data are first filtered and demeaned, and thereafter transformed into transformed spectral data, or trends, using multivariate analysis such as principal components analysis, in which previously calculated principal component weights are used to accomplish the transform. A functional form incorporating multiple trends may be used to more precisely determine the endpoint of an etch process. A method for calculating principal component weights prior to actual etching, based on OES data collected from previous etch processing, is disclosed, which method facilitates rapid calculation of trends and functional forms involving multiple trends, for efficient and accurate in-line determination of etch process endpoint.
申请公布号 US2014106477(A1) 申请公布日期 2014.04.17
申请号 US201314056059 申请日期 2013.10.17
申请人 TOKYO ELECTRON LIMITED 发明人 CHEN YAN;KOMAROV SERGUEI;VUONG VI
分类号 H01L21/66;G06F17/16;H01J37/32;H01L21/67 主分类号 H01L21/66
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