BOUNDED BIAS CIRCUIT WITH EFFICIENT VT-TRACKING FOR HIGH VOLTAGE SUPPLY/LOW VOLTAGE DEVICE

摘要

Disclosed is a device and method for providing a bounded bias voltage with improved Process Voltage Temperature (PVT) adjustment. An embodiment may include a bias_n generation circuit that adjusts a bias_n voltage for PVT as a function of two bias_n NMOS transistors/diodes and a bias_p generation circuit that adjusts a bias_p voltage for PVT as a function of two bias_p PMOS transistors/diodes. An embodiment may further include a PVT adjusted bounded bias voltage circuit comprised of a NMOS transistor with the bias_n voltage at the gate and a PMOS transistor with the bias_p voltage at the gate such that a common connection between the NMOS and PMOS transistors generates a bounded bias voltage adjusted for PVT as a function of two body biased voltages (bias_n/bias_p). The bounded bias voltage may be used to provide a low supply voltage to a low voltage device using an available high voltage supply.