发明名称 ANISOTROPIC CONDUCTIVE MATERIAL, CONNECTION STRUCTURE, AND MANUFACTURING METHOD OF CONNECTION STRUCTURE
摘要 PROBLEM TO BE SOLVED: To provide an anisotropic conductive material capable of preventing voids in a cured product from being formed when a semiconductor chip and a glass substrate are connected, and further enhancing connection reliability when receiving a thermal hysteresis with exposing to high temperature, and to provide a connection structure.SOLUTION: The anisotropic conductive material according to the present invention is used for connecting a semiconductor chip and a glass substrate and contains a thermosetting component and a conductive particle 11. The conductive particle 11 contains a base particle and a conductive layer arranged on a surface of the base particle. A linear thermal expansion coefficient of the base particle is 2×10/°C to 20×10/°C at 60°C to 200°C. A tensile elongation rate at 23°C of cured product obtained by curing the anisotropic conductive material is 2% to 20%, and a tensile strength at 0.5% of the tensile elongation at 85°C of the anisotropic conductive material cured product is 5 MPa to 20 MPa.
申请公布号 JP2014067705(A) 申请公布日期 2014.04.17
申请号 JP20130184318 申请日期 2013.09.05
申请人 SEKISUI CHEM CO LTD 发明人 MAHARA SHIGEO
分类号 H01B1/22;C09J11/04;C09J201/00;H01B1/00;H01B5/16;H01L21/60;H01R11/01 主分类号 H01B1/22
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