| 摘要 |
PROBLEM TO BE SOLVED: To provide EUV photoresist compositions that can provide highly resolved fine features, including low linewidth roughness (LWR), and sufficient sensitivity to afford wafer throughput.SOLUTION: Photoresist compositions comprise: (i) a polymer; and (ii) an acid generator that corresponds to the specified formula (I). In the formula, R1 is a non-hydrogen substituent that provides an acid-labile moiety; A is a hydrogen or non-hydrogen substituent; e is an integer from 0 to 4; R2 and R3 are the same or different non-hydrogen substituents, and R2 and R3 may be taken together to form an aromatic or non-aromatic ring; and Z is a counter anion. |
