| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having low capacitance and low on-resistance.SOLUTION: A semiconductor device includes a first semiconductor layer, a second semiconductor layer, a ninth semiconductor layer provided on the second semiconductor layer, a third semiconductor layer, a first region surrounded by the third semiconductor layer, a fourth semiconductor layer, a second region on the second semiconductor layer, a fifth semiconductor layer, a sixth semiconductor layer, a first terminal connected to the first semiconductor layer, and a second terminal connected to the fifth semiconductor layer and the sixth semiconductor layer. |
