| 摘要 |
PROBLEM TO BE SOLVED: To decrease the number of manufacturing processes of a thin film transistor by forming a gate insulation film by performing an oxidation treatment on a gate electrode composed of a metallic material; and decrease manufacturing cost by omitting a vacuum process.SOLUTION: In a thin film transistor having on a substrate, a gate electrode composed of a metallic material, a gate insulation film, a semiconductor layer composed of a metal oxide material, a protection film, a source electrode and a drain electrode, the gate insulation film is composed of an oxide of the metallic material of the gate electrode. |
