| 摘要 |
The disclosed technology relates to a device including a diode. In one aspect, the device includes a lower group III metal nitride layer and an upper group III metal nitride layer and a heterojunction formed therebetween, where the heterojunction extends horizontally and is configured to form a two-dimensional electron gas (2DEG) that is substantially confined in a vertical direction and within the lower group III metal nitride layer. The device additionally includes a cathode forming an ohmic contact with the upper group III metal nitride layer. The device additionally includes an anode, which includes a first portion that forms a Schottky barrier contact with the upper group III metal nitride layer, and a second portion that is separated vertically from the upper group III metal nitride layer by a layer of dielectric material. The anode is configured such that the second portion is horizontally located between the anode and the cathode and the dielectric material is configured to pinch off the 2DEG layer in a reverse biased configuration of the device. The device further includes a passivation area formed between the anode and the cathode to horizontally separate the anode and the cathode from each other. |
