| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can suppress manufacturing cost.SOLUTION: A semiconductor device 1 comprises as shown in the selected drawing: a P type semiconductor substrate 2; an N type diffusion layer 4 which is formed in the semiconductor substrate 2 and in which an N type first impurity diffuses from a surface 20 of the semiconductor substrate 2 to a predetermined depth d; and a P type diffusion layer 6 which is formed in the semiconductor substrate 2 and in which a first conductivity type second impurity having a concentration lower than that of the first impurity diffuses from the surface 20 to a depth dshallower than the N type diffusion layer 4 and which is surrounded by the N type diffusion layer 4; an insulation film 10 formed on the second diffusion layer; and a first electrode 12 arranged on the insulation film 10. |
