| 发明名称 |
PHOTOLITHOGRAPHY MASK, PHOTOLITHOGRAPHY MASK ARRANGEMENT, AND METHOD FOR EXPOSING A WAFER |
| 摘要 |
A photolithography mask according to an embodiment may include: a mask substrate, the mask substrate having a three-dimensional pattern located and dimensioned to at least partially receive an inverse three-dimensional pattern of a wafer to be exposed using the photolithography mask. |
| 申请公布号 |
US2014106264(A1) |
申请公布日期 |
2014.04.17 |
| 申请号 |
US201313834267 |
申请日期 |
2013.03.15 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
CAMPIDELL JOSEF;LEUSCHNER RAINER;SEEBACHER GOTTFRIED |
| 分类号 |
G03F7/20;G03F1/50 |
主分类号 |
G03F7/20 |
| 代理机构 |
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