| 摘要 |
A method of manufacturing a TFT substrate includes: forming a gate electrode (12) and a gate insulating film (30) on a substrate (8); forming a source electrode (14) and a drain electrode (15) at a gap from each other on the gate insulating film (30), and forming a drain connection part (16); forming, after the step of forming the source electrode and the drain electrode, an oxide semiconductor layer (18, 18a, 18b) that contains a channel portion connecting the source electrode (14) to the drain electrode (15) and that contains an additional portion (18a) covering the drain connection part (16); oxidizing a surface of the oxide semiconductor layer (18, 18a, 18b); forming a contact hole (22) in an insulating film (32) that covers the oxide semiconductor layer; removing a portion of the additional portion (18a) of the oxide semiconductor layer that is located inside the contact hole (22); and forming a conductive layer (20) that electrically connects the drain connection part (16) that has been exposed. |
