发明名称 |
METHOD FOR USING SPUTTERING TARGET AND METHOD FOR MANUFACTURING OXIDE FILM |
摘要 |
A plasma space containing an ionized inert gas is formed in contact with a deposition surface and a surface of a sputtering target containing a polycrystalline oxide including a plurality of crystal grains with randomly oriented c-axes. A flat-plate-like sputtered particle is separated from a cleavage plane corresponding to a-b planes of the plurality of crystal grains by collision of the ionized inert gas with the surface of the sputtering target. The flat-plate-like sputtered particle is transferred to the deposition surface through the plasma space with its flat-plate-like shape substantially maintained. The flat-plate-like sputtered particle and another flat-plate-like sputtered particle charged with the same polarity repel each other and are deposited on the deposition surface so as to be adjacent to each other on a plane such that the c-axes are substantially perpendicular to the deposition surface. |
申请公布号 |
US2014102877(A1) |
申请公布日期 |
2014.04.17 |
申请号 |
US201314054081 |
申请日期 |
2013.10.15 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI |
分类号 |
C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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