摘要 |
<p>In one aspect of the present invention, a film-forming apparatus has a substrate sequentially pass through a first region and a second region in a processing container by having a placing table rotate about the axis line, said substrate being placed on a substrate placing region. A precursor gas is supplied to the first region. In the second region, plasma of a reaction gas is generated by means of a plasma generating section. The plasma generating section has antennas that supply microwaves as a plasma source. Each of the antennas includes a window member formed of a dielectric material, and a waveguide. The window member is provided on the second region. The waveguide is provided on the window member. The waveguide demarcates a waveguide path extending in the radiation direction with respect to the axis line. The waveguide has a plurality of slot holes formed therein for the purpose of passing through the microwaves from the waveguide path toward the window member. The lower surface of the window member demarcates a groove that extends in the radiation direction with respect to the axis line.</p> |