发明名称 METHOD OF FORMING AN INTEGRATED SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR
摘要 In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance.
申请公布号 HK1140586(A1) 申请公布日期 2014.04.17
申请号 HK20100106907 申请日期 2010.07.16
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES L.L.C. 发明人 STEVEN M. ETTER;MINGJIAO LIU;ALI SALIH;DAVID D. MARREIRO;SUDHAMA C. SHASTRI
分类号 H03H;H01L 主分类号 H03H
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