发明名称 SOLID-STATE IMAGING DEVICE
摘要 In a solid-state imaging device, N regions serving as photoelectric conversion diodes are formed on outer peripheries of P regions in upper portions of island-shaped semiconductors formed on a substrate, and P+ regions connected to a pixel selection line conductive layer are formed on top layer portions of upper ends of the island-shaped semiconductors so as to adjoin the N regions and the P regions. In the P+ regions, a first P+ region has a thickness less than a second P+ region, and the second P+ region has a thickness less than a third P+ region.
申请公布号 US2014103408(A1) 申请公布日期 2014.04.17
申请号 US201314053077 申请日期 2013.10.14
申请人 UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. 发明人 MASUOKA FUJIO;HARADA NOZOMU
分类号 H01L31/0232 主分类号 H01L31/0232
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