发明名称 SURFACE PROCESSING DEVICE, SURFACE PROCESSING METHOD AND FLOW CONTROL DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a surface processing device which can stably control a reaction gas even when a flow rate is low.SOLUTION: A surface processing device 1 comprises: a loading part 7 for loading a substrate 8 which is to be subjected to surface processing; a gas supply part 2 for supplying a reaction gas G (main gas g1); a flow path 3 for introducing the main gas g1 from the gas supply part 2; a flow adjustment mechanism 4 for adjusting a flow rate of the main gas g1 to supply the adjusted main gas to a nozzle group 5 as adjusted gases g2, the flow adjustment mechanism 4 being arranged in the flow path; a plurality of nozzles n1-n10 which compose the nozzle group 5 and supply the adjusted gasses g2 introduced in a branched manner to the loading part 7 as a supply gas g3; and a move part 9 for relatively moving the loading part 7 and the nozzles n1-n10. The flow adjustment mechanism 4 performs flow control by alternately and repeatedly causing an on-off valve to be in an open state and a closed state.
申请公布号 JP2014067950(A) 申请公布日期 2014.04.17
申请号 JP20120213709 申请日期 2012.09.27
申请人 SEIKO EPSON CORP 发明人 NAMOSE ISAMU
分类号 H01L21/3065;H01L21/302 主分类号 H01L21/3065
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