| 发明名称 |
Control Fin Heights in FinFET Structures |
| 摘要 |
A device includes a substrate, an isolation region at a top surface of the substrate, and a semiconductor fin over the isolation region. The semiconductor fin has a fin height smaller than about 400Å, wherein the fin height is measured from a top surface of the semiconductor fin to a top surface of the isolation region |
| 申请公布号 |
US2014103453(A1) |
申请公布日期 |
2014.04.17 |
| 申请号 |
US201314132299 |
申请日期 |
2013.12.18 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
MOR YI-SHIEN;CHEN HSIAO-CHU;CHIANG MU-CHI |
| 分类号 |
H01L27/088;H01L29/78 |
主分类号 |
H01L27/088 |
| 代理机构 |
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代理人 |
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| 主权项 |
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