HIGH BRIGHTNESS LIGHT EMITTING DIODE COVERED BY ZINC OXIDE LAYERS ON MULTIPLE SURFACES GROWN IN LOW TEMPERATURE AQUEOUS SOLUTION

摘要

A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.