发明名称 |
SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME |
摘要 |
A semiconductor light emitting device having enhanced luminous efficiency and a manufacturing method thereof are provided. The semiconductor light emitting device includes: an n-type semiconductor layer having at least one pit formed in an upper surface thereof; an active layer formed on the n-type semiconductor layer, a region of the active layer corresponding to the pit having an upper surface bent along the pit; and a p-type semiconductor layer formed on the active layer, a region of the p-type semiconductor layer corresponding to the pit having an upper surface bent along the bent portion of the active layer. |
申请公布号 |
US2014103359(A1) |
申请公布日期 |
2014.04.17 |
申请号 |
US201114125878 |
申请日期 |
2011.07.28 |
申请人 |
SHIM HYUN WOOK;HAN SANG HEON;HAN JAE WOONG;SHIN DONG CHUL;KIM JE WON;LEE DONG JU;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIM HYUN WOOK;HAN SANG HEON;HAN JAE WOONG;SHIN DONG CHUL;KIM JE WON;LEE DONG JU |
分类号 |
H01L33/32;H01L33/00 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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