Method for simultaneous two-sided material-removing machining of surfaces of disc of e.g. semiconductor wafer, involves conducting disc of semiconductor material during co-material-machining of surfaces of recess in rotor disc

摘要

The method involves conducting a disc (4) of semiconductor material during co-material-machining of the surfaces of the peripheral inner edge of recess (2) in a rotor disc (1) that is provided in an area that is bounded with a top and a bottom. The edge (41) of the disc of semiconductor material of inner core material (32) is not in direct contact with the inner edge of the recess and the contact of the inner core material is protected against the outer profile (31). The outer profile consists of plastic.