| 摘要 |
PROBLEM TO BE SOLVED: To enhance reliability by forming a capacitor insulating film with uniform thickness, thereby enhancing the voltage follow-up of a whole capacitor element and the breakdown voltage of a capacitor element.SOLUTION: A capacitor element includes an active region sectioned by an element isolation region formed on a semiconductor substrate, a first electrode composed of a diffusion layer formed in the active region, a capacitor insulating film formed on the first electrode, and a second electrode formed on a flat surface of the first electrode with the capacitor insulating film interposed therebetween. The element isolation region is formed by embedding an insulating film in an element isolation groove formed in the semiconductor substrate, and a part of the element isolation groove constitutes a capacitor element formed by removing the peripheral part of the first electrode, and the semiconductor substrate therearound. |
