| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of obtaining a high withstand voltage and a stable threshold value, and to provide a method of manufacturing the same.SOLUTION: A semiconductor device includes a structure, an insulating film, and a control electrode. The structure has a first surface and includes a first semiconductor region containing silicon carbide of a first conductivity type, a second semiconductor region containing silicon carbide of a second conductivity type, and a third semiconductor region containing silicon carbide of the first conductivity type. The structure has a portion in which the first semiconductor region, the second semiconductor region, and the third semiconductor region are arranged in a first direction along the first surface in this order. The insulating film is provided on the first surface. The control electrode is provided on the insulating film. The structure has a buried region provided between the second semiconductor region and the first surface. In the buried region, a group-V element is introduced. |
