| 摘要 |
PROBLEM TO BE SOLVED: To provide an electric power semiconductor element having a low ON voltage and having good switching characteristics.SOLUTION: According to the embodiment, there is provided the electric power semiconductor element including first to fifth electrodes and first to fourth semiconductor layers. The first semiconductor layer is provided on a first surface side of the first electrode. The second semiconductor layer is provided on the first semiconductor layer, and has an impurity concentration higher than that of the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The fourth semiconductor layer is provided in the third semiconductor layer. The second electrode is provided on the fourth semiconductor layer, and electrically connected with the fourth semiconductor layer. The third electrode is provided in the second and third semiconductor layers via an insulating film. The fourth electrode is provided in the second and third semiconductor layers via the insulating film. The fifth electrode is provided between the third and fourth electrodes via the insulating film, and electrically connected with the second electrode. |
