发明名称 |
FIELD EFFECT TRANSISTOR DEVICE HAVING A HYBRID METAL GATE STACK |
摘要 |
A semiconductor device including a gate structure present on a channel portion of a semiconductor substrate and at least one gate sidewall spacer adjacent to the gate structure. In one embodiment, the gate structure includes a work function metal layer present on a gate dielectric layer, a metal semiconductor alloy layer present on a work function metal layer, and a dielectric capping layer present on the metal semiconductor alloy layer. The at least one gate sidewall spacer and the dielectric capping layer may encapsulate the metal semiconductor alloy layer within the gate structure. |
申请公布号 |
US2014106531(A1) |
申请公布日期 |
2014.04.17 |
申请号 |
US201213677489 |
申请日期 |
2012.11.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CABRAL, JR. CYRIL;CHANG JOSEPHINE B.;CHUDZIK MICHAEL P.;FRANK MARTIN M.;GUILLORN MICHAEL A.;LAVOIE CHRISTIAN;NARASIMHA SHREESH;NARAYANAN VIJAY |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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