发明名称 SUBSTRATE SUPPORT APPARATUS AND SUBSTRATE PROCESS APPARATUS
摘要 The present invention relates to a substrate supporting apparatus and a substrate processing apparatus, including: a chamber for forming a processing space; a gas jetting unit which supplies a treatment gas into the chamber; and a substrate support which is arranged inside the chamber, and which supports the substrate. The substrate support is prepared with a flow path which supplies a purge gas to the upper edge and lower edge of the substrate, through respective flow ducts, so as to evenly supply the purge gas to the edge portions of the substrate.
申请公布号 KR20140045806(A) 申请公布日期 2014.04.17
申请号 KR20120112024 申请日期 2012.10.09
申请人 WONIK IPS CO., LTD. 发明人 LEE, DAE JUN;CHOI, HYUNG SUB;KIM, YONG JIN
分类号 H01L21/683;C23C16/458;H01L21/205 主分类号 H01L21/683
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