发明名称 |
SUBSTRATE SUPPORT APPARATUS AND SUBSTRATE PROCESS APPARATUS |
摘要 |
The present invention relates to a substrate supporting apparatus and a substrate processing apparatus, including: a chamber for forming a processing space; a gas jetting unit which supplies a treatment gas into the chamber; and a substrate support which is arranged inside the chamber, and which supports the substrate. The substrate support is prepared with a flow path which supplies a purge gas to the upper edge and lower edge of the substrate, through respective flow ducts, so as to evenly supply the purge gas to the edge portions of the substrate. |
申请公布号 |
KR20140045806(A) |
申请公布日期 |
2014.04.17 |
申请号 |
KR20120112024 |
申请日期 |
2012.10.09 |
申请人 |
WONIK IPS CO., LTD. |
发明人 |
LEE, DAE JUN;CHOI, HYUNG SUB;KIM, YONG JIN |
分类号 |
H01L21/683;C23C16/458;H01L21/205 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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