发明名称 METHOD FOR PRODUCING THE ELECTRICAL CONTACTS OF A SEMICONDUCTOR DEVICE, SUCH AS A PHOTOVOLTAIC CELL, COMPRISING STEPS INVOLVING THE LASER ETCHING AND WET ETCHING OF DIELECTRIC LAYERS
摘要 The invention relates to a method for producing an electrical contact (114) of a semiconductor device (100), such as a contact of the front face of a photovoltaic cell, said method comprising the following steps: depositing an electrically conductive and optically transparent layer (104) on a face (102) of the device; depositing first and second dielectric layers (106, 108) on the aforementioned layer (104), in which the second dielectric layer (108) can be selectively etched by laser; performing selective laser etching on the second dielectric layer (108), such as to form a first opening (110); producing a second opening (112), aligned with the first opening (110), in the first dielectric layer (106) by means of wet etching; and, subsequently, performing the following steps in an alternating manner, namely: etching the second dielectric layer (108); and depositing at least one electrically conductive material (114) on the electrically conductive and optically transparent layer (104) through the second opening (112), or the steps of depositing an electrically conductive material (114) on the electrically conductive and optically transparent layer (104) through the second opening (112), such that portions of the electrically conductive material (114) are deposited on the second dielectric layer (108) around the first opening (110); and etching portions of the second dielectric layer (108) that are not covered by the portions of electrically conductive material (114).
申请公布号 WO2014029836(A3) 申请公布日期 2014.04.17
申请号 WO2013EP67443 申请日期 2013.08.22
申请人 COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES 发明人 DESRUES, THIBAUT;DE VECCHI, SYLVAIN;OZANNE, FABIEN;SOUCHE, FLORENT
分类号 H01L31/0224 主分类号 H01L31/0224
代理机构 代理人
主权项
地址