摘要 |
The invention relates to a method for producing an electrical contact (114) of a semiconductor device (100), such as a contact of the front face of a photovoltaic cell, said method comprising the following steps: depositing an electrically conductive and optically transparent layer (104) on a face (102) of the device; depositing first and second dielectric layers (106, 108) on the aforementioned layer (104), in which the second dielectric layer (108) can be selectively etched by laser; performing selective laser etching on the second dielectric layer (108), such as to form a first opening (110); producing a second opening (112), aligned with the first opening (110), in the first dielectric layer (106) by means of wet etching; and, subsequently, performing the following steps in an alternating manner, namely: etching the second dielectric layer (108); and depositing at least one electrically conductive material (114) on the electrically conductive and optically transparent layer (104) through the second opening (112), or the steps of depositing an electrically conductive material (114) on the electrically conductive and optically transparent layer (104) through the second opening (112), such that portions of the electrically conductive material (114) are deposited on the second dielectric layer (108) around the first opening (110); and etching portions of the second dielectric layer (108) that are not covered by the portions of electrically conductive material (114). |