SIC MOSFET WITH TRENCH STRRUCTURES AND THEIR FABRICATION METHOD

摘要

The present invention relates to an SiC MOSFET having a trench and a manufacturing method thereof. According to one embodiment of the present invention, the SiC MOSFET having a trench and the manufacturing method thereof include a first step of etching a trench in a SiC substrate; a second step of vertically ion-injecting vanadium into the SiC substrate; a third step of ion-injecting nitrogen into a trench sidewall; and a forth step of forming a trench gate structure.