| 摘要 |
The present invention relates to a semiconductor light emitting device. The semiconductor light emitting device according to the embodiment of the present invention includes: a plurality of semiconductor layers; a contact area to expose a first semiconductor layer by partially removing a second semiconductor layer and an active layer; a nonconductive reflection layer which is formed to cover the second semiconductor layer and the contact area; a first branch electrode which is extended from a first side to a third side between the nonconductive reflection layer and the second semiconductor layer; a first electrical connection part which is electrically connected to the first branch electrode; a second electrical connection part which is electrically connected to the first semiconductor layer on the contact area; two first bonding pads which are electrically connected to the first electrical connection part; two second bonding pads which are electrically connected to the second electrical connection part; a first electrode; and a second electrode. |
