METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Provided is a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device comprises forming an insulation film including a trench on a substrate; forming first and second metal gate film patterns on the trench, wherein the height from the substrate to the upper surface of the insulation layer is higher than the height from the substrate to the upper surface of the first and second metal gate film patterns; re-depositing a second metal gate film on the insulation film and the first and second metal gate film patterns; re-depositing the second metal gate film pattern to be positioned on the first and second metal gate film patterns by performing a planarization process for removing part of the re-deposited second metal gate film to expose the upper surface of the insulation layer; and forming a blocking film pattern on the re-deposited second metal gate film pattern by oxidizing the exposed surface of the re-deposited second metal gate film pattern.